Toshiba announced today that it has initiated mass production of NAND Flash memories using 24nm process technology. The initial devices are MLC (2 bits/cell) 64-Gbit devices with Toggle-Mode DDR interfaces for high transfer speed. Toshiba also plans to make TLC (3 bits/cell) and 32-Gbit devices using this process technology. This announcement puts Toshiba ahead in the “20nm-class club.” Other members of the club include Samsung, making NAND Flash devices using what is considered to be a 27-nm process; Hynix, using what is believed to be a 26-nm process; and IM Flash (jointly owned by Intel and Micron), using a 25nm process. The use of “20nm-class” process technologies across the board by all of these vendors puts NAND Flash squarely at the front as a process-technology driver.